国家/地区 Japan（6）
关键词
出版物 APPLIED PHYSICS EXP.（2） JOURNAL OF APPLIED .（2） PHYSICAL REVIEW B（2）
出版时间 2008（8）
机构 UNIV AIZU（6）
作者 RYZHII V（8）

High-frequency properties of a graphene nanoribbon field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII M, SATOU A, RYZHII V, OTSUJI T

Effect of the Coulomb Scattering on Graphene Conductivity

JETP LETTERS

VYURKOV V, RYZHII V

Nonequilibrium carriers in intrinsic graphene under interband photoexcitation

PHYSICAL REVIEW B

SATOU A, VASKO FT, RYZHII V

Thermionic and tunneling transport mechanisms in graphene field-effect transistors

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

RYZHII V, RYZHII M, OTSUJI T

Device model for graphene nanoribbon phototransistor

APPLIED PHYSICS EXPRESS

RYZHII V, MITIN V, RYZHII M, RYABOVA N, OTSUJI T

Current-voltage characteristics of a graphene-nanoribbon field-effect transistor

JOURNAL OF APPLIED PHYSICS

RYZHII V, RYZHII M, SATOU A, OTSUJI T

Photoconductivity of intrinsic graphene

PHYSICAL REVIEW B

VASKO FT, RYZHII V

Tunneling current-voltage characteristics of graphene field-effect transistor

APPLIED PHYSICS EXPRESS

RYZHII V, RYZHII M, OTSUJI T